Challenges and opportunities in advanced Ge pMOSFETs |
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Affiliation: | 1. Inst. für Materialphysik, Münster, Germany;2. Università degli Studi di Catania, Catania, Italy |
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Abstract: | This paper aims at reviewing the state-of-the art of Ge pMOSFETs for future high-performance CMOS devices. Key in the development is the integration of a Ge channel on a silicon platform and the passivation of the interface between the high-k gate stack and the substrate. The different routes will be critically discussed in view of optimizing the on-current related to a high low-field hole mobility and reducing the off-current and the short-channel effects. Finally, an outlook on future technology developments will be formulated. |
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