0.7 W single-drift GaAs IMPATT diodes for millimetre-wave frequencies |
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| Authors: | Zhang X. Freyer J. |
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| Affiliation: | Technische Universit?t München, Lehrstuhl für Allgemeine Elektrotechnik und Angewandte Elektronik, München, West Germany; |
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| Abstract: | Single-drift flat-profile GaAs IMPATT diodes with diamond heat sinks have been fabricated in the 50 GHz band. The design of the diodes is based on a lower value of effective saturated drift velocity of electrons at high electric fields. Output power as high as 0.7 W at 53 GHz and an efficiency of 12.3% at 51 GHz have been obtained. |
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