Effect of some growth parameters on vacuum-deposited CulnSe2 films |
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| Authors: | M M El-Nahass H S Soliman D A Hendi Kh A Mady |
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| Affiliation: | (1) Faculty of Education, Ain Shams University, Heliopolis, Cairo, Egypt;(2) Girls' College of Education, Jeddah, Saudi Arabia;(3) Physics Department, National Research Centre, Dokki, Cairo, Egypt |
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| Abstract: | P-type copper indoselenide (CulnSe2) thin films were vacuum-deposited on glass substrates by a single-source thermal evaporation technique under different conditions of preparation. The structural properties of the films were investigated by X-ray diffraction and transmission electron microscopy and diffraction techniques. The dark resistivity of the deposited films was investigated as a function of film thickness, deposition rate and substrate temperature. The conductivity activation energy ranges from 0.851 to 1.01 eV depending on the deposition rate. Single-phase and stoichiometric CulnSe2 films could be deposited at low deposition rates (less than 4 nms–1). Higher deposition rates led to multiphase films containing InSe, ln2Se3, CuSe and Cu3Se2 in addition to CulnSe2. |
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