Growth mechanism of 3C-SiC(lll) on Si without carbonization process |
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Authors: | Young Hun Seo Kee Suk Nahm Eun Kyung Suh Hyung Jae Lee |
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Affiliation: | (1) School of Chemical Engineering and Technology, Chonbuk National University, 561-756 Chonju, Republic of Korea;(2) Department of Physics, and Semiconductor Physic Research Center, Chonbuk National University, 561-756 Chonju, Republic of Korea |
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Abstract: | We have used rapid thermal chemical vapor deposition (RTCVD) technique to grow epitaxial SiC thin films on Si wafers without
carbonization process by pyrolyzing tetramethylsilane (TMS). The growth rate of SiC films increases with TMS flow rate and
temperature, but it decreases with temperature at higher TMS flow rates. The XRD spectra of the films indicate that the growth
direction is along the (111) direction of β-SiC. IR and RBS measurements have been employed to analyze the chemical composition
of the films. At 1100°C TMS molecules dissociate almost completely into Si atoms, CH4 and C2H2 gases. The growth mechanism of SiC films on Si substrates without carbonization process has been proposed based on the analyses
by TEM and QMS. |
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Keywords: | Silicon Carbide (SiC) RTCVD Growth Mechanism Carbonization |
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