Silicene field effect transistor with high on/off current ratio and good current saturation

We investigate theoretically the possibility of exploiting the electrically tunable band gap property of silicene to achieve field effect transistor with improved characteristics. We find that the silicene field effect transistor where a band gap is introduced through a perpendicular electric field shows a subthreshold swing smaller than 60 mV/decade and a switching effect with high on/off current ratio exceeding \(10^{5}\). We find also that the device output characteristic displays a very good saturation due to improved pinch-off of the channel, stemming from the electrically induced band gap.