Incoherent transport in NEMO5: realistic and efficient scattering on phonons |
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Authors: | James Charles Prasad Sarangapani Roksana Golizadeh-Mojarad Robert Andrawis Daniel Lemus Xinchen Guo Daniel Mejia James E. Fonseca Michael Povolotskyi Tillmann Kubis Gerhard Klimeck |
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Affiliation: | 1.School of Electrical and Computer Engineering,Purdue University,West Lafayette,USA;2.Network for Computational Nanotechnology,Purdue University,West Lafayette,USA;3.Intel Corporation,Santa Clara,USA |
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Abstract: | In this work, the coherent and incoherent transport simulation capabilities of the multipurpose nanodevice simulation tool NEMO5 are presented and applied on transport in tunneling field-effect transistors. The comparison with experimental resistivity data confirms the validity of NEMO5’s phonon-scattering models. Common pitfalls of numerical implementations and the applicability of common approximations of scattering self-energies are discussed. The impact of phonon-assisted tunneling on the performance of TFETs is exemplified with a concrete Si nanowire device. The communication-efficient implementation of self-energies in NEMO5 is demonstrated with a scaling comparison of self-energies solved with blocking and nonblocking MPI-communication. |
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