Uncoupled mode space approach for analysis of nanoscale strained junctionless double-gate MOSFET

In this paper, we have analyzed the electrical characteristics of Strained Junctionless Double-Gate MOSFET (Strained JL DG MOSFET). A quantum mechanical transport approach based on non-equilibrium Green’s function (NEGF) method with the use of uncoupled mode space approach has been employed for this analysis. We have investigated the effects of high-\(\kappa \) materials as gate and spacer dielectrics on the device performance. Low OFF-state current, low DIBL, and low subthreshold slope have been obtained with increase in the gate and spacer dielectric constants. The electrical characteristics of strained JL DG MOSFET have also been compared with conventional JL DG MOSFET and Inversion Mode (IM) DG MOSFET. The results indicated that the Strained JL DG MOSFET outperforms the conventional JL and IM DG MOSFETs, yielding higher values of drain current.