VCSELs based on arrays of sub-monolayer InGaAs quantum dots |
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Authors: | S A Blokhin N A Maleev A G Kuz’menkov Yu M Shernyakov I I Novikov N Yu Gordeev V V Dyudelev G S Sokolovski? V I Kuchinski? M M Kulagina M V Maximov V M Ustinov A R Kovsh S S Mikhrin N N Ledentsov |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(2) NL-Nanosemiconductors GmbH, 44227 Dortmund, Germany |
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Abstract: | Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 µm in diameter demonstrate single-mode lasing in 980-nm range with the threshold current of 0.6 mA, maximum output power up to 4 mW, and external differential efficiency of 68%. Multimode VCSELs with a (10–12)-µm aperture demonstrate ultralow internal optical loss of 0.09% per pass, which compares favorably with the best results obtained in similar lasers with undoped distributed Bragg reflectors. |
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