Under-surface observation of thin-film alumina on NiAl(100) with scanning tunneling microscopy |
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Authors: | C.T. WangC.W. Lin C.L. HsiaB.W. Chang M.F. Luo |
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Affiliation: | Department of Physics and Center for Nano Science and Technology, National Central University, 300 Jhongda Road, Jhongli 32001, Taiwan |
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Abstract: | Scanning tunneling microscopy (STM) was used to investigate the oxide structures underlying the surface of alumina thin-film grown on NiAl(100). At a bias voltage (on the sample) below 2.0 V, STM topography images of the alumina layer beneath the surface were obtained. A probe with depth of 2-8 Å was readily attained. The under-surface observation shows that the film consists of stacked layers of alumina whereas the layered alumina unnecessarily comprises entire θ-Al2O3 unit cells. The lattice orientation of the upper alumina layer differs from that of the lower one by 90° — the newly grown oxide structurally matching the horizontal oxide rather than the lower oxide. The results indicate a growth process competing with the typical mode of epitaxial growth for the growth of alumina film. |
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Keywords: | Scanning tunneling microscopy Alumina NiAl Thin films Under-surface Density functional calculations |
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