A new route for fabricating CdO/c-Si heterojunction solar cells |
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Authors: | Raid A Ismail Omar A Abdulrazaq |
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Affiliation: | aSchool of Applied Physics, University of Technology, Baghdad, Iraq;bNASSR State Company-Ministry of Industry and Minerals, Baghdad, Iraq |
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Abstract: | CdO/c-Si solar cells have been made by depositing CdO thin films on p-type monocrystalline silicon substrate by means of the rapid thermal oxidation (RTO) technique using a halogen lamp at 350 °C/45 s in static air. Results on structural, optical, and electrical properties of grown CdO films are reported. The electrical and photovoltaic properties of CdO/Si solar cells are examined. Under AM1 illumination condition, the cell shows an open circuit voltage (VOC) of 500 mV, a short circuit current density (JSC) of 27.5 mA/cm2, a fill factor (FF) of 60%, and a conversion efficiency (η) of 8.84% without using frontal grid contacts and/or post-deposition annealing. Furthermore, the stability of solar cells characteristics is tested. |
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Keywords: | Cdo Si Solarcell RTO Efficiency |
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