| LPE生长外延片超薄有源层结构的SEM研究 |
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| 引用本文： | 王晓华,任大翠.LPE生长外延片超薄有源层结构的SEM研究[J].长春理工大学学报,1997(4). |
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| 作者姓名： | 王晓华 任大翠 |
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| 作者单位： | 长春光学精密机械学院高功率半导体激光国家重点实验室 |
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| 摘 要： | 通过对液相外延（LPE）生长的外延片不同处理方法的研究，摸索出一条利用扫描电子显微镜（SEM）来观测有源区厚度的有效方法──蒸金法，最优可观察有源区厚度20nm，对设计厚度为18nm结构来说1]，这是一种便利而有效的观察手段。
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| 关 键 词： | 液相外延 扫描电子显微镜 超薄层 |
SEM Study on Ultra-thin Active Layer Struture of LPE Wafers |
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| Wang Xiaohua, Ren Dacui.SEM Study on Ultra-thin Active Layer Struture of LPE Wafers[J].Journal of Changchun University of Science and Technology,1997(4). |
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| Authors: | Wang Xiaohua Ren Dacui |
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| Affiliation: | Stase Key Laboratory on High Power Seniconductor Lasers of Changchun Inst. Optics & Fine Mech. |
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| Abstract: | This Paper presents three operating mehtods of epitaxial wafers and explores a way using a S-4200 SEM to measure the active layer thickness, that is the method of goldplating, The optimum thickness observed is 20nm, For the designed thickness of 18nm as in this paper, this is a convenient and useful means. |
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| Keywords: | LPE SEM Ultra-thin layer |
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