| 单原子层沉积原理及其应用 |
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| 引用本文： | 吴宜勇,李邦盛,王春青. 单原子层沉积原理及其应用[J]. 电子工业专用设备, 2005, 34(6): 6-10,17 |
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| 作者姓名： | 吴宜勇 李邦盛 王春青 |
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| 作者单位： | 哈尔滨工业大学材料科学与工程学院,黑龙江,哈尔滨,150001 |
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| 摘 要： | 传统的薄膜材料制造方法已不能满足未来元器件和集成电路制造的要求,原子层沉积技术由于具有精确的厚度控制、沉积厚度均匀性和一致性等特点,已成为解决微电子制造相关超薄膜材料制造问题的主要解决方法之一,也将成为新的纳米材料和纳米结构的制造方法之一。综述了原子层沉积技术的原理、技术设备要求和应用。
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| 关 键 词： | 单原子层沉积 深亚微米器件 理论和应用 |
| 文章编号： | 1004-4507(2005)06-0006-05 |
Theory and Applications of Atomic Layer Deposition |
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| WU Yi-yong,LI Bang-sheng,WANG Chun-qing. Theory and Applications of Atomic Layer Deposition[J]. Equipment for Electronic Products Marufacturing, 2005, 34(6): 6-10,17 |
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| Authors: | WU Yi-yong LI Bang-sheng WANG Chun-qing |
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| Abstract: | Conventional techniques such as PVD and CVD are not suitable for the future manufactory of the micro-devices due to that they cannot deposit such films. A new technology of atomic layer deposition would become one of solutions for the future ultra-thin materials because of its precisely digital control in the film thickness (to angstrom scale) and compositions, excellent uniformality and conformance. This paper reviews the theory, application and the corresponding equipments for atomiclayerdepositionprocess. |
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| Keywords: | Atomic layer deposition Deep sub-micron devices Theory and applications |
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