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SnO2 Nanowire Arrays and Electrical Properties Synthesized by Fast Heating a Mixture of SnO2 and CNTs Waste Soot
Authors:Zi-Jiong Li  Zhen Qin  Zhi-Hua Zhou  Li-Ying Zhang  Ya-Fei Zhang
Affiliation:(1) Department of Physics, Zhengzhou University of Light Industry, 450007 Zhengzhou, People’s Republic of China;(2) Research Institute of Micro/Nanometer Science & Technology, Shanghai Jiao Tong University, 200240 Shanghai, People’s Republic of China;(3) College of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, 450011 Zhengzhou, People’s Republic of China
Abstract:SnO2 nanowire arrays were synthesized by fast heating a mixture of SnO2 and the carbon nanotubes waste soot by high-frequency induction heating. The resultant SnO2 nanowires possess diameters from 50 to 100 nm and lengths up to tens of mircrometers. The field-effect transistors based on single SnO2 nanowire exhibit that as-synthesized nanowires have better transistor performance in terms of transconductance and on/off ratio. This work demonstrates a simple technique to the growth of nanomaterials for application in future nanoelectronic devices.
Keywords:SnO2nanowires   Semiconducting   Field-effect transistor
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