| InAlN/AlN/GaN HEMT器件特性研究 |
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| 引用本文： | 刘海琪,周建军,董逊,陈堂胜.InAlN/AlN/GaN HEMT器件特性研究[J].固体电子学研究与进展,2011,31(2):120-123. |
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| 作者姓名： | 刘海琪 周建军 董逊 陈堂胜 |
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| 作者单位： | 南京电子器件研究所,南京,210016 |
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| 摘 要： | 通过利用MOCVD生长的高质量蓝宝石衬底InAlN/AlN/GaN异质结材料,获得了高的二维电子气面密度,其值为1.65×10<'13>cm<'-2>.通过该结构制备了0.15 μm栅长InAlN/AIN/GaN HEMT器件,获得了相关的电学特性:最大电流密度为1.3A/mm,峰值跨导为260mS/ram,电流增益截...
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| 关 键 词： | 铟铝氮/氮化镓 高电子迁移率晶体管 二维电子气 薄势垒层厚度 |
Investigation on DC and RF Performance of InAlN/AlN/GaN HEMTs |
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| LIU Haiqi,ZHOU Jianjun,DONG Xun,CHEN Tangsheng.Investigation on DC and RF Performance of InAlN/AlN/GaN HEMTs[J].Research & Progress of Solid State Electronics,2011,31(2):120-123. |
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| Authors: | LIU Haiqi ZHOU Jianjun DONG Xun CHEN Tangsheng |
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| Abstract: | InAlN/AlN/GaN heterostructure grown by MOCVD on sapphire substrate was fabricated with a high 2-dimensional electron gas(2DEG) density of 1.65×1013 cm-2.The devices with a gate length of 0.15 μm were fabricated on the InAlN/AlN/GaN heterostructure.A maximum drain current density of 1.3 A/mm,a peak extrinsic transconductance of 260 mS/mm were obtained through DC measurement.For their microwave characteristics,a current gain cut-off frequency (fT) of 65 GHz and a maximum oscillation frequency(fmax) of 85 GHz were measured.Compared to conventional AlGaN/AlN/GaN HEMTs,the DC and RF performance of InAlN/AlN/GaN HEMTs are improved greatly due to the high 2DEG density and thin barrier layer. |
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| Keywords: | InAlN/GaN HEMT 2DEG thin barrier layer |
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