Preparation of ZnSe light-emitting diodes by metalorganic chemical vapor deposition using trisdimethylaminoarsine as a p-type doping source |
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Authors: | M. J. Bevan H. D. Shih J. A. Dodge A. J. Syllaios D. F. Weirauch |
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Affiliation: | (1) Texas Instruments Incorporated, Kilby Center, P.O. Box 655012, MS 3701, 75265 Dallas, TX;(2) Sensors and Infrared Laboratory, Raytheon TI Systems, P.O. Box 655936, MS 150, 75265 Dallas, TX |
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Abstract: | Trisdimethylaminoarsine was used in atmospheric-pressure metalorganic chemical vapor deposition growth of ZnSe on GaAs. The metalorganic precursors employed for ZnSe growth were diethylzinc and diethylselenide, and ethyliodide was used as then-type dopant. P-on-n light emitting diode (LED) structures were prepared, and molecular beam epitaxially deposited HgTe layers were used as ohmic contacts to the p-type ZnSe. Blue LEDs were fabricated on p-on-n samples. Preliminary LED data and the material characterization data are presented. |
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Keywords: | II– VI compounds metalorganic vapor phase epitaxy (MOVPE) p-type doping ZnSe |
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