| 溅射功率对AlN薄膜结构形貌的影响 |
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| 引用本文： | 高扬,许绍俊,谌青青,孟祥钦,张彩虹,文忠,杨涛,杨成韬. 溅射功率对AlN薄膜结构形貌的影响[J]. 压电与声光, 2012, 34(2): 276-278 |
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| 作者姓名： | 高扬 许绍俊 谌青青 孟祥钦 张彩虹 文忠 杨涛 杨成韬 |
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| 作者单位： | 1. 电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054
2. 川庆钻探有限公司地址勘探开发研究院,四川成都,610054 |
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| 基金项目： | 总装备部基金资助项目(5141202) |
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| 摘 要： | 采用直流反应磁控溅射法在Si(111)基片上制备了AlN薄膜,利用X线衍射(XRD)、场发射扫描电子显微镜(FESEM)、原子力显微镜(AFM)对不同溅射功率下制备的AlN薄膜的结构及形貌进行了分析表征。结果表明:在一定范围内,随着溅射功率的增大,薄膜厚度增加,晶粒逐渐长大,表面粗糙度也随之增大;AlN(002)择优取向改善明显,120W时达到最佳。
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| 关 键 词： | AlN薄膜 溅射功率 结构 形貌 |
Effect of Sputtering Power on Crystal Structure Morphology in AlN Thin Films |
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| GAO Yang,XU Shaojun,CHEN Qingqing,MENG Xiangqin,ZHANG Caihong,WEN Zhong,YANG Tao and YANG Chengtao. Effect of Sputtering Power on Crystal Structure Morphology in AlN Thin Films[J]. Piezoelectrics & Acoustooptics, 2012, 34(2): 276-278 |
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| Authors: | GAO Yang XU Shaojun CHEN Qingqing MENG Xiangqin ZHANG Caihong WEN Zhong YANG Tao YANG Chengtao |
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| Affiliation: | 1(1.State Key Lab.of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China, Chengdu 610054,China;2.Geological Exploration & Development Research Institute of CNPC Chuanqing Drilling Engineering Company Limited,Chengdu 610054,China) |
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| Abstract: | AlN thin films were deposited by the direct current(DC) reactive magnetron sputtering technique on Si(111) substrates at different sputtering power.The X-ray diffraction(XRD),field emission scanning electron morphology(FESEM) and atomic force microscope(AFM) were employed to characterize the films’ morphology deposited at different sputtering power.The results show that within a certain range,the film thickness,crystal grain size and surface roughness values increased with increasing the input sputtering power;the preferential c-axis orientation has been improved significantly with increasing input sputtering power and it has been become optimal when the input power was up to 120 W. |
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| Keywords: | AlN thin films puttering power structure morphology |
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