| 高耐压LDMOS用的高K薄膜湿法刻蚀研究 |
| |
| 引用本文： | 王伟宾,霍伟荣,赵远远,王姝娅,束平,张国俊. 高耐压LDMOS用的高K薄膜湿法刻蚀研究[J]. 压电与声光, 2012, 34(1): 114-117 |
| |
| 作者姓名： | 王伟宾 霍伟荣 赵远远 王姝娅 束平 张国俊 |
| |
| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054 |
| |
| 摘 要： | 为了对横向双扩散MOSFET(LDMOS)器件所采用的锆钛酸铅(PZT)高介电常数(高K)薄膜进行微图形化,对湿法刻蚀过程中腐蚀液、光刻、刻蚀等工艺进行了优化研究,发现由BOE+HCl+HNO3+H2O+缓冲剂组成的腐蚀液刻蚀效果较好。刻蚀结果表明,所刻蚀薄膜的厚度约为600nm,最小线条宽度约为3μm,侧蚀比减小到1.07∶1,符合功率器件制备的尺度要求,由此所制备的LDMOS器件耐压提高了近2倍。
|
| 关 键 词： | 高K薄膜 锆钛酸铅(PZT)薄膜 湿法刻蚀 LDMOS 刻蚀速率 |
Research on Wet Etching of High-K Thin Films Used in the LDMOS Power Devices |
| |
| WANG Weibin,HUO Weirong,ZHAO Yuanyuan,WANG Shuy,SHU Ping and ZHANG Guojun. Research on Wet Etching of High-K Thin Films Used in the LDMOS Power Devices[J]. Piezoelectrics & Acoustooptics, 2012, 34(1): 114-117 |
| |
| Authors: | WANG Weibin HUO Weirong ZHAO Yuanyuan WANG Shuy SHU Ping ZHANG Guojun |
| |
| Affiliation: | (State Key Lab.of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
| |
| Abstract: | For the micro-pattern study of high permittivity(high-K) thin films PZT used in high voltage LDMOS power devices,the etching solution,lithography and etching process parameters of the wet etching technique had been optimized.The etching solution composed of BOE+HCl+HNO3+H2O+buffer owned preferably etching effect.The tested result showed that the smallest etched lines of PZT films were about 600 nm thick,3 μm wide,and lateral erosion ratio was reduced to 1.07∶1,which met the requirements of power device fabrication requirements.The breakdown voltage of the LDMOS device with high-K thin films has been increased nearly 2-fold. |
| |
| Keywords: | high-K thin films PZT thin films wet etching LDMOS etching rate |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《压电与声光》浏览原始摘要信息 |
|
点击此处可从《压电与声光》下载免费的PDF全文 |
|
