| Mg2Si薄膜在Si(100)衬底上的外延生长研究 |
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| 引用本文： | 钟建伟,余志强,张昌华,杨庆.Mg2Si薄膜在Si(100)衬底上的外延生长研究[J].压电与声光,2012,34(1):133-135. |
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| 作者姓名： | 钟建伟 余志强 张昌华 杨庆 |
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| 作者单位： | 1. 湖北民族学院电气工程系,湖北恩施,445000
2. 湖北民族学院电气工程系,湖北恩施 445000;贵州大学新型光电子材料与技术研究所,贵州贵阳 550025 |
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| 基金项目： | 湖北省教育厅科学技术研究计划重点基金资助项目 |
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| 摘 要： | 采用直流磁控溅射系统,在Si(100)衬底上制备了外延Mg2Si半导体薄膜。通过XRD和场发射扫描电子显微镜(FESEM)对Mg2Si薄膜的晶体结构和表面形貌进行表征,理论分析了Mg2Si薄膜的消光特性对Mg2Si薄膜外延取向的影响,得到了Mg2Si薄膜的外延取向特性。结果表明,在Si(100)衬底上,外延Mg2Si薄膜具有Mg2Si(220)的择优生长特性。
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| 关 键 词： | 磁控溅射 Mg2Si薄膜 消光特性 错配度 |
Study on Epitaxial Growth of Mg2Si Film on Si( 100)Substrate |
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| ZHONG Jianwei,YU Zhiqiang,ZHANG Changhua and YANG Qing.Study on Epitaxial Growth of Mg2Si Film on Si( 100)Substrate[J].Piezoelectrics & Acoustooptics,2012,34(1):133-135. |
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| Authors: | ZHONG Jianwei YU Zhiqiang ZHANG Changhua and YANG Qing |
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| Affiliation: | 1(1.Dept.of Electrical Engineering,Hubei University for Nationalities,Enshi 445000,China; 2.Institute of Advanced Optoelectronic Materials and Technology,Guizhou University,Guiyang 550025,China) |
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| Abstract: | The epitaxial film of semiconductor Mg2Si was prepared on Si(100) substrate by DC magnetron sputtering system.The crystal structures and the surface morphology of the Mg2Si films were characterized by X-ray diffraction(XRD) and field emission scanning electron microscope(FESEM).The epitaxial orientation property of Mg2Si film was obtained by analyzing the effect of the extinction property of Mg2Si film theoretically.It was found that the epitaxial Mg2Si film prepared on the Si(100) has only one preferred orientation of Mg2Si(220). |
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| Keywords: | megnetron sputtering Mg2Si film extinction property mismatches |
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