| 退火温度对ZnO/PZT薄膜结构及电阻率的影响 |
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| 引用本文： | 谌青青,高扬,杨涛,杨成韬,文忠,张彩虹,孟祥钦. 退火温度对ZnO/PZT薄膜结构及电阻率的影响[J]. 压电与声光, 2012, 34(2): 262-264 |
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| 作者姓名： | 谌青青 高扬 杨涛 杨成韬 文忠 张彩虹 孟祥钦 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054 |
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| 基金项目： | 总装备部预研基金资助项目(5141202) |
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| 摘 要： | 采用射频反应磁控溅射法在Pb(Zr0.52Ti0.48)O3(PZT)/Pt/Ti/SiO2/Si基片上制备了ZnO薄膜,利用X线衍射仪(XRD)、原子力显微镜(AFM)、霍尔效应测试系统等对不同退火温度下制备薄膜的结构、形貌及电阻率等进行了分析表征。结果表明,退火温度600℃的ZnO薄膜(002)择优取向较好,晶粒大小均匀,表面平整致密。随着退火温度的增大,电阻率先下降后升高,600℃时ZnO薄膜电阻率达最小。
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| 关 键 词： | ZnO薄膜 退火温度 X线衍射仪(XRD) 原子力显微镜(AFM) |
Influence of Annealing Temperature on Structure and Resistivity of ZnO/PZT Thin Films |
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| CHEN Qingqing,GAO Yang,YANG Tao,YANG Chengtao,WEN Zhong,ZHANG Caihong and MENG Xiangqin. Influence of Annealing Temperature on Structure and Resistivity of ZnO/PZT Thin Films[J]. Piezoelectrics & Acoustooptics, 2012, 34(2): 262-264 |
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| Authors: | CHEN Qingqing GAO Yang YANG Tao YANG Chengtao WEN Zhong ZHANG Caihong MENG Xiangqin |
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| Affiliation: | (State Key Lab.of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China, Chengdu 610054,China) |
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| Abstract: | ZnO thin films were prepared by radio-frequency(RF) reactive magnetron sputtering on Pb(Zr0.52Ti0.48)O3(PZT)/Pt/Ti/SiO2/Si(PZT) substrates,The influence of post-annealing temperature on the structural,morphological and electrical properties of ZnO films was investigated by XRD,AFM and Hall effect measurement system.The results showed that after annealing at 600 ℃ the ZnO films(002) with high C-orientation,small surface roughness,dense and uniform gains were provided.When annealing temperature increased,the resistivity decreased firstly and then increased.The ZnO films annealed at the annealing temperature of 600 ℃ had the lowest resistivity. |
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| Keywords: | ZnO thin film annealing temperature XRD AFM |
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