共晶硅变质机理研究进展

随着对共晶Si变质机理的深入研究,相继发现了一些新的证据,提出了一些新的假说。共晶Si的变质机理主要存在两种：形核理论和生长理论。“小面-非小面转变说”的核心是Si相的形核受到抑制,而“毒化”机制、Zigzag孪晶生长模型及杂质诱发孪晶机制揭示了变质时共晶Si晶体的生长行为。文中对共晶Si的变质机理研究进展进行了综述。

Development on Mechanisms of the Eutectic Si Modification

With studying on the eutectic Si modification, many new evidences were found one after the other and hence some new mechanisms were put forward. There are two principal mechanisms: the nucleation theory and the growth theory. The hard core of the facet/non-facet transition hypothesis is that the nucleation of the eutectic Si crystal is restrained. The "poisoning" mechanism, the Zigzag model of twinning growth and the impurity induced twinning mechanism show the change of the growth mode of the eutectic Si crystals. The development on the modification mechanism was reviewed in the present paper.