| Abstract: | The average bond energy method is popularized and applied to study band offsets at strained layer heterojunctions. By careful examination of hydrostatic and uniaxial strain actions on the band offset parameter Emv, it is found that the average band offset parameter Emv,av=Em-Ev,av remains basically unchanged under different strain conditions. Therefore, provided the band offset parameter before strain Emv,0 of bulk material is calculated, and the experiment values of deformation potential b and spin-orbit (SO) splitting energy Δ0 are quoted, the Emv at strained layer can be obtained by a simple and convenient algebraic calculation. Thus the valence band offset ΔEv at strained layer heterojunction can also be predicted conveniently. This simplified calculation method is characterized by decreased calculation amount and increased conviction due to use as many as possible the experiment values. |
