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1kA高功率脉冲磁控溅射电源研制及试验研究
引用本文:桂刚,田修波,朱宗涛,吴忠振,巩春志,杨士勤. 1kA高功率脉冲磁控溅射电源研制及试验研究[J]. 真空, 2011, 48(4)
作者姓名:桂刚  田修波  朱宗涛  吴忠振  巩春志  杨士勤
作者单位:哈尔滨工业大学现代焊接与连接国家重点实验室,黑龙江哈尔滨,150001
基金项目:国家自然科学基金(10905013)
摘    要:高功率脉冲磁控溅射(HPPMS)以其在真空镀膜上更大的优势而越来越受到重视,高压大电流电源是实现HPPMS的关键因素。本文研制了1000 A高功率脉冲磁控溅射电源,给出了电源框架图和主电路拓扑结构图。对脉冲部分采用仿真分析探索大模块IGBT的不均流因素,结果表明驱动一致性是影响均流的关键原因之一;分析了大电流时IGBT两端电压过冲问题,采用RCD吸收和续流回路能有效抑制电压过冲,使电压过冲在正常安全范围内。用所研制的电源进行等离子体负载实验,运行良好,为性能优异薄膜的制备奠定硬件基础。

关 键 词:HPPMS  1000A电源研制  逆变  并联均流  电压过冲  

Development of 1kA high power pulsed magnetron sputtering power supply
GUI Gang,TIAN Xiu-bo,ZHU Zong-tao,WU Zhong-zhen,GONG Chun-zhi,YANG Shi-qin. Development of 1kA high power pulsed magnetron sputtering power supply[J]. Vacuum(China), 2011, 48(4)
Authors:GUI Gang  TIAN Xiu-bo  ZHU Zong-tao  WU Zhong-zhen  GONG Chun-zhi  YANG Shi-qin
Affiliation:GUI Gang,TIAN Xiu-bo,ZHU Zong-tao,WU Zhong-zhen,GONG Chun-zhi,YANG Shi-qin(State Key Lab.of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,China)
Abstract:A power supply with maximum output pulse current of 1000A was developed for high power pulsed magnetron sputtering(HPPMS) in this paper.Diagrammatic sketch and circuit topology of the power system were presented.The main pulse circuit was analyzed with PSpice simulation program and synchronization of IGBT driver is the key factor of parallel current sharing.RCD absorbing and freewheeling circuit were used to reduce overshoot voltage of IGBT.Practical experiments demonstrate that the newly developed power su...
Keywords:HPPMS  1kA power supply  inversion  parallel current sharing  overshoot voltage  
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