| 新型双功率MOSFET管谐振驱动电路 |
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| 引用本文： | 郭晓君,林维明. 新型双功率MOSFET管谐振驱动电路[J]. 中国电机工程学报, 2011, 31(33) |
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| 作者姓名： | 郭晓君 林维明 |
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| 作者单位： | 福州大学电气工程与自动化学院,福建省福州市,350108 |
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| 基金项目： | 国家自然科学基金项目(60572016)~~ |
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| 摘 要： | 提出一种新型双功率MOSFET管互补谐振驱动电路，对电路的工作原理、性能特性和关键电路参数设计进行分析，并建立仿真和样机实验。该驱动电路由1个变压器和6个半导体器件组成，类似反激变换器的电路结构，并且以谐振方式工作。理论分析表明，该电路具有拓扑结构和控制简单、驱动损耗低、驱动速度快、驱动电路中的开关管实现了部分软开关等优点。仿真和实验结果验证了理论分析。
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| 关 键 词： | 双功率MOSFET管 高频 栅极驱动电路 谐振 驱动损耗 |
A Novel Resonant Gate Driving Circuit for Dual Power MOSFETs |
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| GUO Xiaojun,LIN Weiming. A Novel Resonant Gate Driving Circuit for Dual Power MOSFETs[J]. Proceedings of the CSEE, 2011, 31(33) |
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| Authors: | GUO Xiaojun LIN Weiming |
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| Affiliation: | GUO Xiaojun,LIN Weiming(College of Electrical Engineering and Automation,Fuzhou University,Fuzhou 350108,Fujian Province,China) |
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| Abstract: | A novel resonant gate driving circuit for a pair of complementary power MOSFETs was proposed.Operational principle,circuit characteristics and design criteria for the key circuit parameters were investigated.Simulation and prototype were also set up.The circuit is constituted of one transformer and six semiconductor devices,and similar to a flyback converter.The analysis shows that the driving circuit possesses the advantages such as few components,simple control,low driving losses,fast driving speed and so... |
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| Keywords: | dual power MOSFET high frequency gate driving circuit resonant driving losses |
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