| 化合物半导体的THz发射光谱 |
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| 引用本文： | 赵国忠,张振伟,崔伟丽,张存林.化合物半导体的THz发射光谱[J].半导体学报,2005,26(13):9-12. |
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| 作者姓名： | 赵国忠 张振伟 崔伟丽 张存林 |
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| 作者单位： | 首都师范大学物理系，北京 100037;首都师范大学物理系，北京 100037;首都师范大学物理系，北京 100037;首都师范大学物理系，北京 100037 |
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| 摘 要： | 利用反射式太赫兹（THz）辐射产生与探测系统，研究了基于不同半导体的THz发射光谱. 通过快速傅里叶变换，由测得的THz时域光谱得到了其相应的频域光谱，从而对不同半导体的THz发射性质进行了比较. 结果表明，未掺杂的砷化铟(InAs)较其他半导体材料有更高效的THz发射效率.
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| 关 键 词： | THz 半导体 电光取样 发射光谱 |
THz Emission Spectra Based on Different Compound Semiconductors |
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| Zhao Guozhong,Zhang Zhenwei,Cui Weili and Zhang Cunlin.THz Emission Spectra Based on Different Compound Semiconductors[J].Chinese Journal of Semiconductors,2005,26(13):9-12. |
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| Authors: | Zhao Guozhong Zhang Zhenwei Cui Weili and Zhang Cunlin |
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| Affiliation: | Department of Physics,Capital Normal University,Beijing 100037,China;Department of Physics,Capital Normal University,Beijing 100037,China;Department of Physics,Capital Normal University,Beijing 100037,China;Department of Physics,Capital Normal University,Beijing 100037,China |
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| Abstract: | A THz generation and detection system using the reflection-type THz radiation equipment is presented.The THz emission spectra based on different compound semiconductors are shown.By means of fast Fourier transformation,the frequency domain spectra of THz emission by different semiconductors are obtained from their time domain spectra.THz emission properties of different semiconductors are compared.The results show that the undoped InAs is a kind of more effective THz emission material than those of other studied semiconductors. |
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| Keywords: | THz semiconductor electro-optic sampling emission spectra |
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