| The Bipolar Field-Effect Transistor:Ⅶ.The Unipolar Current Mode for Analog-RF Operation(Two-MOS-Gates on Pure-Base) |
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| 作者姓名： | 揭斌斌 薩支唐 |
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| 作者单位： | Peking;University;Florida;Gainesville;Chinese;Academy;Sciences;Foreign;Member; |
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| 基金项目： | supported by the CTSAH Associates (CTSA);;founded by the late Linda Su-Nan Chang Sah,in memory of her 70th year. |
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| 摘 要： | This paper reports the DC steady-state current-voltage and conductance-voltage characteristics of a Bipolar Field-Effect Transistor(BiFET) under the unipolar(electron) current mode of operation,with bipolar(elec-tron and hole) charge distributions considered.The model BiFET example presented has two MOS-gates on the two surfaces of a thin pure silicon base layer with electron and hole contacts on both edges of the thin base.The hole contacts on both edges of the thin pure base layer are grounded to give zer...
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