Experimental investigation of microchannel coolers for the high heat flux thermal management of GaN-on-SiC semiconductor devices |
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| Affiliation: | 1. Naval Research Laboratory, MS 6843, 4555 Overlook AV SW, Washington, DC 20375, USA;2. ATK Mission Research, Suite 700, 8560 Cinderbed Road, Newington, VA 22122, USA;1. Laboratory of Thermodynamics in Emerging Technologies, Institute of Energy Technology, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland;2. Advanced Micro Integration, IBM Research – Zurich, 8803 Rüschlikon, Switzerland;3. Department of Mechanical Engineering, University College London (UCL), Torrington Place, London WC1E 7JE, UK;1. Cooling Technologies Research Center, an NSF I/UCRC, School of Mechanical Engineering, Purdue University, West Lafayette, IN 47907, USA;2. School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA;3. Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA |
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| Abstract: | Experiments on removing high heat fluxes from GaN-on-SiC semiconductor dies using microchannel coolers are described. The dies contain an AlGaN/GaN heterostructure operated as a direct current resistor, providing a localized heat source. The active dimensions of the heat source are sized to represent the spatially-averaged heat flux that would appear in microwave power amplifiers. A wide variety of microchannel materials and configurations are investigated, allowing a comparison of performance and the resulting GaN temperatures. Silicon and AlN microchannel coolers exhibit good performance at lower power densities (1000–1200 W/cm2 over 3 × 5 mm2 to 2 × 5 mm2 active areas). Polycrystalline chemical vapor deposited (CVD) SiC microchannel coolers are found to be extremely promising for higher power densities (3000–4000 W/cm2 over 1.2 × 5 mm2 active areas with 120 °C GaN temperature). A hybrid microchannel cooler consisting of low-cost CVD diamond on polycrystalline CVD SiC exhibits moderately better performance (20–30%) than polycrystalline CVD SiC alone. |
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