Thermal Conductivity of Bi0.5Sb1.5Te3 Affected by Grain Size and Pores |
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Authors: | Takashi Hamachiyo Maki Ashida Kazuhiro Hasezaki |
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Affiliation: | (1) Department of Materials Science, Shimane University, Nishikawatsu-cho 1060, Matsue, Shimane 690-8504, Japan |
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Abstract: | A fine measurement system for measuring thermal conductivity was constructed. An accuracy of 1% was determined for the reference quartz with a value of 1.411 W/m K. Bi0.5Sb1.5Te3 samples were prepared by mechanical alloying followed by hot-pressing. Grain sizes were varied in the range from 1 μm to 10 μm by controlling the sintering temperature in the temperature range from 623 K to 773 K. The thermal conductivity was 0.89 W/m K for the sample sintered at 623 K, while a grain size of 1.75 μm was measured by optical microscopy and scanning electron microscopy. The thermal conductivity increased on the sample sintered at 673 K because of grain growth and decreased on those sintered at the temperatures from 673 K to 773 K because the increase of pore size caused to decrease thermal conductivity. The increase of thermal conductivity for the samples sintered at temperatures above 773 K was affected by the increase of carrier concentration. |
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Keywords: | Bismuth telluride thermal conductivity |
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