Resistivity of sub-50 nm copper lines epitaxially grown on Si(100) substrate |
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Authors: | Pei-I WangMichael D. Frey Morris WashingtonSaroj Nayak Toh-Ming Lu |
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Affiliation: | Center of Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, USA |
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Abstract: | We report the creation of 50 nm thick epitaxial Cu lines with line widths ranging from 20 nm to 120 nm on Si(100) substrate using a combination of electron beam lithography, oblique angle deposition, and lift-off techniques. The increase of measured resistivity as a function of decreasing line width is dominated by surface scattering that is completely diffuse. The measured resistivity of the 20 nm wide lines is ~ 4 μΩ-cm. |
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Keywords: | Resistivity Cu nanolines Finite size effect Surface diffuse scattering |
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