Performance Evaluation of Inversion Mode and Junctionless Dual-Material Double-Surrounding Gate Si Nanotube MOSFET for 5-nm Gate Length |
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| Authors: | Sanjay Prasad B. Vohra A. |
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| Affiliation: | 1.Electronic Science Department, Kurukshetra University, 136119, Kurukshetra, Haryana, India
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| Abstract: | Semiconductors - In this work, drain current ID for 5-nm gate length with dual-material (DM) double-surrounding gate (DSG) inversion mode (IM) and junctionless (JL) silicon nanotube (SiNT) MOSFET... |
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