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Evolution of Electron Transport under Resistive Switching in Porphyrazine Films
Authors:Drozdov  K. A.  Krylov  I. V.  Vasilik  V. A.  Kosov  A. D.  Dubinina  T. V.  Ryabova  L. I.  Khokhlov  D. R.
Affiliation:1.Department of Physics, Lomonosov Moscow State University, 119991, Moscow, Russia
;2.Department of Chemistry, Lomonosov Moscow State University, 119991, Moscow, Russia
;3.Institute of Physiologically Active Compounds, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia
;4.Lebedev Physical Institute, Russian Academy of Sciences, 119333, Moscow, Russia
;
Abstract:Semiconductors - An analysis of the I–V characteristics makes it possible to determine the mechanisms of conduction corresponding to different states of the flow channels upon resistive...
Keywords:
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