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Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy |
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| Authors: | Abramkin D S Petrushkov M O Emelyanov E A Nenashev A V Yesin M Yu Vasev A V Putyato M A Bogomolov D B Gutakovskiy A K Preobrazhenskiy V V |
| Affiliation: | 1.Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ;2.Novosibirsk State University, 630090, Novosibirsk, Russia ; |
| Abstract: | Semiconductors - The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 – xAsyP1 – y quaternary alloy upon the deposition of... |
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