Switching from negative to positive nonlinear absorption in p type 0.5 at% Sn doped GaSe semiconductor crystal |
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Authors: | M Yüksek A Elmali M Karabulut GM Mamedov |
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Affiliation: | aDepartment of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Beşevler, Ankara, Turkey;bDepartment of Physics, Kafkas University, 36100 Kars, Turkey |
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Abstract: | The nonlinear absorption properties of p type 0.5 at% Sn doped GaSe crystal have been studied by using open-aperture Z-scan technique under 1064 nm wavelength and 4 ns or 65 ps pulse duration. A switching from negative nonlinear absorption (saturated absorption) to positive nonlinear absorption (two photon absorption) has been observed as the input laser irradiance increases from 0.049 GW/cm2 to 0.106 GW/cm2. The nonlinear absorption coefficient increases monotonically with the increase of pulse duration from 65 ps to 4 ns. |
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Keywords: | Sn doped GaSe crystal Z-scan Saturable absorption Two photon absorption |
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