OMVPE growth of CdTe on InSb substrates

In this paper we report on the growth and electrical characteristics of CdTe on InSb substrates, grown by OMVPE. The growth was carried out over a range of temperatures from 350 to 440° C, and a range of dimethylcadmium (DMCd) and diethyltelluride (DETe) pressures from 0.5 − 7 × 10⁻⁴ atm and 2 − 10 × 10⁻⁴ atm, respectively. The sublinear growth characteristic observed has been explained by means of the Langmuir Hinshelwood model. This provides an insight into the mechanism by which this material is grown. The effect of temperature and the reactant partial pressure on the growth rate and electrical characteristics have been explained in light of the observed results. The photoluminescence properties of these layers are indicative of their suitability for device applications, and are superior to those of CdTe layers grown on bulk CdTe. It has been shown that growth of high quality layers can be achieved over a wide range of partial pressure ratios of DMCd and DETe.