| GaN基量子阱红外探测器的设计 |
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| 引用本文： | 孙鲁,赵慧元,苏秉华. GaN基量子阱红外探测器的设计[J]. 现代电子技术, 2011, 34(10): 208-210 |
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| 作者姓名： | 孙鲁 赵慧元 苏秉华 |
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| 作者单位： | 北京理工大学珠海学院,广东珠海,519085 |
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| 摘 要： | 为了实现GaN基量子阱红外探测器，利用自洽的薛定谔一泊松方法对GaN基多量子阱结构的能带结构进行了研究。考虑了GaN基材料中的自发极化和压电极化效应，通过设计适当的量子阱结构，利用自发极化和压电极化的互补作用，设计出了极化匹配的GaN基量子阱红外探测器，为下一步实现GaN基量子阱红外探测器做好了准备。
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| 关 键 词： | GaN 量子阱 红外探测器 极化匹配 |
Design of GaN-based Quantum Well Infrared Detector |
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| SUN Lu,ZHAO Hui-yuan,SU Bing-hua. Design of GaN-based Quantum Well Infrared Detector[J]. Modern Electronic Technique, 2011, 34(10): 208-210 |
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| Authors: | SUN Lu ZHAO Hui-yuan SU Bing-hua |
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| Affiliation: | (Zhuhai Campus of Beijing Institute of Technology,Zhuhai 519085,China) |
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| Abstract: | To realize GaN-based quantum well infrared photodetector, the energy band structures of GaN-based multiquantum well structures are researched using self-consistent Schro dinger-Poisson equations. Considering the spontaneous and piezoelectric polarization in GaN-based materials, polarization-matched GaN-based quantum well infrared photodectors are designed by utilizing the compensation effect between the spontaneous and piezoelectric polarization. It is very important to fabricate the devices in the next step. |
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| Keywords: | GaN quantum well infrared detector polarization match |
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