Synchrotron X-Ray photoconductor detector arrays made on MBE grown CdTe |
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Authors: | S S You B Rodricks S Sivananthan J P Faurie P A Montano |
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Affiliation: | (1) Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, 60607 Chicago, IL;(2) Advanced Photon Source, Argonne National Laboratory, 60439 Argonne, IL;(3) Present address: Material Science Division, Argonne National Laboratory, 60439 Argonne, IL |
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Abstract: | We have been fabricating x-ray photoconductor linear array detectors using molecular beam epitaxially (MBE) grown (lll)B undoped
CdTe layers on (100) Si substrates. A novel technique was developed to remove the Si and to mount the fragile MBE grown CdTe
layers onto insulating ceramic substrates. 256 channel linear photoconductor array devices were fabricated on the resulting
CdTe layers. The resistivity of MBE (lll)B CdTe was high (>108 \cm) enough to utilize the material for low energy (8 ~ 25
keV) x-ray detectors. The stability of the detectors are satisfactory, and they were tested at room temperature routinely
for over a year. The performance of the photoconductor was greatly improved when the detector was cooled to 230K. Due to its
reduced dark current at low temperatures, the dynamic range of the detector response increased to nearly four decades at 230K. |
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Keywords: | Linear array photoconductor molecular beam epitaxy (MBE) CdTe synchrotron x-ray x-ray detector |
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