| 掺杂VO2薄膜的制备及其光电性质 |
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| 引用本文： | 杨子健,杨爱国,杨建红,冯浩,李冠斌,崔敬忠. 掺杂VO2薄膜的制备及其光电性质[J]. 半导体技术, 2009, 34(2) |
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| 作者姓名： | 杨子健 杨爱国 杨建红 冯浩 李冠斌 崔敬忠 |
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| 作者单位： | 兰州大学物理科学与技术学院,兰州,730000;兰州物理研究所,兰州,730000 |
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| 摘 要： | 以石英片为基底,采用直流/射频磁控共溅射法制备了掺A、掺Ti的V02薄膜.对所制样品进行了电阻-温度关系、原子力显微镜、透射光谱等光电性能测试.结果分析表明,Al元素可以提高薄膜相变温度及Ti元素可以有效提高相变前后电阻率变化幅度,并且用半导体能带理论对VO2薄膜光电性质改变的原因及掺杂对其造成的影响予以解释,提出了影响相变滞豫的原因及改善方法.最后对磁控共溅射沉积方法制备掺杂薄膜的工艺方法提出了改进.
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| 关 键 词： | 二氧化钒薄膜 磁控共溅射 掺杂 光电特性 能带 |
Preparation of Doped VO_2 Thin Films and Its Electrical-Optical Properties |
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| Yang Zijian,Yang Aiguo,Yang Jianhong,Feng Hao,Li Guanbin,Cui Jingzhong. Preparation of Doped VO_2 Thin Films and Its Electrical-Optical Properties[J]. Semiconductor Technology, 2009, 34(2) |
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| Authors: | Yang Zijian Yang Aiguo Yang Jianhong Feng Hao Li Guanbin Cui Jingzhong |
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| Affiliation: | 1.School of Physical Science and Technology;Lanzhou University;Lanzhou 730000;China;2.Lanzhou Institute of Physics;China |
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| Abstract: | Al-and Ti-doped VO2 films were deposited on quartz substrates using DC/RF magnetron co-sputtering techniques.The resistance-temperature dependence and transmittance spectroscopy properties were tested by AFM.The experimental results indicate that the thermal-optical and electric properties of Al-doped and Ti-doped VO2 films can be changed dramatically after the phase transition.It was explained by the energy band theory,and a method was proposed to improve the magnetron co-sputtering techniques. |
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| Keywords: | VO2 film magnetron co-sputtering doping electrical-optical properties energy band |
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