Photoelectric Properties of Silicon Nanocrystals/P3HT Bulk-Heterojunction Ordered in Titanium Dioxide Nanotube Arrays |
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Authors: | Vladimir ?vr?ek Ivan Turkevych Michio Kondo |
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Affiliation: | (1) Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba 305-8568, Japan |
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Abstract: | A silicon nanocrystals (Si-ncs) conjugated-polymer-based bulk-heterojunction represents a promising approach for low-cost
hybrid solar cells. In this contribution, the bulk-heterojunction is based on Si-ncs prepared by electrochemical etching and
poly(3-hexylthiophene) (P3HT) polymer. Photoelectric properties in parallel and vertical device-like configuration were investigated.
Electronic interaction between the polymer and surfactant-free Si-ncs is achieved. Temperature-dependent photoluminescence
and transport properties were studied and the ratio between the photo- and dark-conductivity of 1.7 was achieved at ambient
conditions. Furthermore the porous titanium dioxide (TiO2) nanotubes’ template was used for vertical order of photosensitive Si-ncs/P3HT-based blend. The anodization of titanium foil
in ethylene glycol-based electrolyte containing fluoride ions and subsequent thermal annealing were used to prepare anatase
TiO2 nanotube arrays. The arrays with nanotube inner diameter of 90 and 50 nm were used for vertical ordering of the Si-ncs/P3HT
bulk-heterojunction. |
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Keywords: | Silicon nanocrystals Bulk heterojunction Titanium dioxide nanotubes |
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