| 铝导带薄膜混合集成电路工艺 |
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| 引用本文： | 杨成刚. 铝导带薄膜混合集成电路工艺[J]. 电子元件与材料, 1997, 16(5): 47-50 |
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| 作者姓名： | 杨成刚 |
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| 作者单位： | 国营四四三三厂 |
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| 摘 要： | 在薄膜混合集成电路中，以铝导带代替金导带不失为一种廉价而很有前景的工艺，但铝与银浆的黏接在一定的温度和时间下，会产生一种绝缘金属间化合物，需要一定的电压才能击穿，从而使最终产品失效。采用Ａｌ－Ｎｉ复合导带可以解决上述问题，并得到满意的结果。
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| 关 键 词： | 真空淀积 复合导带 刻蚀 金属间化合物 |
Al Conduction Band in Thin Film HIC |
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| Yang Chenggang. Al Conduction Band in Thin Film HIC[J]. Electronic Components & Materials, 1997, 16(5): 47-50 |
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| Authors: | Yang Chenggang |
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| Abstract: | It is a promising technology using Al conduction band in thin film HIC The problem is that when Al paste and Ag paste adhere to each other, at a certain temperature and for a certain period of time,a insulative intermetallic compound would be produced It could not be broken down until the voltage across reaches a certain level, which would lead to the failure of end products, The problem can be solved by means of Al Ni composite compound band |
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| Keywords: | vacuum deposition composite conduction band etching intermetallic compound |
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