Electrical properties and compositional distributions of CVT and PVT grown Hg1−xCdxTe epilayers |
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Authors: | Yi-Gao Sha M P Volz S L Lehoczky |
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Affiliation: | (1) Space Science Laboratory, NASA Marshall Space Flight Center, 35812 Huntsville, AL |
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Abstract: | Epitaxial layers of Hg1−xCdx Te were grown on CdTe substrates by the chemical vapor transport technique using Hgl2 as a transport agent. The epilayers were of nearly uniform composition both laterally and to a depth of about one-half of
the layer thickness. By comparison, the composition varied continuously throughout the depth of the layer for epilayers grown
by the physical vapor transport technique. Layers were grown both p- and n-type with carrier concentrations on the order of
1017 cm−3. Low-temperature annealing was used to convert the p-type layers into n-type. The room-temperature carrier mobilities of
as-grown and converted n-type layers ranged from 103 to 104 cm2/V-s depending on the composition and are comparable to previous literature values for undoped Hg1−xCdxTe crystals. |
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Keywords: | Chemical vapor transport (CVT) technique HgCdTe physical vapor transport (PVT) technique |
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