| In_xGa_(1-x)As/GaAs应变单量子阱结构的静压光致发光研究 |
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| 引用本文： | 李国华,郑宝真,韩和相,汪兆平,T G.Andersson,Z.G.Chen.In_xGa_(1-x)As/GaAs应变单量子阱结构的静压光致发光研究[J].半导体学报,1989,10(4):317-321. |
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| 作者姓名： | 李国华 郑宝真 韩和相 汪兆平 T G.Andersson Z.G.Chen |
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| 作者单位： | 中国科学院半导体研究所，中国科学院半导体研究所，中国科学院半导体研究所，中国科学院半导体研究所，Department of Physics，Chalmers University，of Technology，S-41296 Goteberg，Sweden，Department of Physics，Chalmers University，of Technology，S-41296 Goteberg，Sweden 北京，北京，北京，北京 |
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| 摘 要： | 在室温和液氮温度下,0-60kbar范围内对In_xGa(1-x)As/GaAs应变单量子阱结构进行了静压光致发光研究.在室温下,量子阱中发光峰随压力的变化是亚线性的,而在液氮温度下是线性的.阱中发光峰的压力系数比GaAs势垒的小约10％左右.发现对应于导带第二子带的发光峰的压力系数略大于第一子带的.此结果与GaAs/Al_xGa_(1-x)As量子阱的情况正好相反.
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| 关 键 词： | 量子阱 光致发光 压力 |
Photoluminescence Studies of In_xGa_(1-x)As/GaAs Strained Single Quantum Well Structures under Hydrostatic Pressure |
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| Li Guohua/Institute of Semiconductors,Academia SinicaZheng Baozhen/Institute of Semiconductors,Academia SinicaHan Hexiang/Institute of Semiconductors,Academia SinicaWang Zhaoping/Institute of Semiconductors,Academia SinicaT. G. Andersson/.Photoluminescence Studies of In_xGa_(1-x)As/GaAs Strained Single Quantum Well Structures under Hydrostatic Pressure[J].Chinese Journal of Semiconductors,1989,10(4):317-321. |
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| Authors: | Li Guohua/Institute of Semiconductors Academia SinicaZheng Baozhen/Institute of Semiconductors Academia SinicaHan Hexiang/Institute of Semiconductors Academia SinicaWang Zhaoping/Institute of Semiconductors Academia SinicaT G Andersson/ |
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| Affiliation: | Li Guohua/Institute of Semiconductors,Academia SinicaZheng Baozhen/Institute of Semiconductors,Academia SinicaHan Hexiang/Institute of Semiconductors,Academia SinicaWang Zhaoping/Institute of Semiconductors,Academia SinicaT. G. Andersson/Department of Physics,Chalmers University of Technology,S-41296 Goteberg,SwedenZ. G. Chen/Department of Physics,Chalmers University of Technology,S-41296 Goteberg,Sweden |
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| Abstract: | The photoluminescence properties of In_xGa_(1-x)AS/GaAs strained single quantum well stru-cture (SSQW) have been studied at room and liquid nitrogen temperature under hydrostatic pres-sure up to 60 kbar.The pressure behavior of photoluminescence peak from quantum well issublinear at room temperature but linear at liquid nitrogen temperature.The pressure coef-ficients of SSQW are 10 percent smaller than that of bulk GaAs.The pressure coefficient ofphotoluminescence peak from 2nd subband of conductionband is somewhat larger than that fromIst subband in contrast with the results in GaAs/Al_xGa_(1-x) As MQW. |
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| Keywords: | Quantum well Photoluminescence Pressure |
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