| 6H-SiCOI MESFET器件结构参数对其特性的影响 |
| |
| 引用本文： | 龚欣,张进城,郝跃,李培咸.6H-SiCOI MESFET器件结构参数对其特性的影响[J].微电子学,2004,34(3):257-260,264. |
| |
| 作者姓名： | 龚欣 张进城 郝跃 李培咸 |
| |
| 作者单位： | 西安电子科技大学,微电子所,陕西,西安,710071 |
| |
| 基金项目： | 国防预先研究项目资助课题(41308060106) |
| |
| 摘 要： | 采用二维器件仿真软件Medici，模拟分析了SiCOI(绝缘衬底上SiC)MESFET器件的结构参数，如有源层掺杂浓度、栅长和有源层厚度等，对器件特性(阏值电压和跨导)的影响。结果表明，其结构参数对器件特性有较大影响。同时，对所得结果从内部物理机制上进行了分析。
|
| 关 键 词： | SiCOI MESFET 结构参数 |
| 文章编号： | 1004-3365(2004)03-0257-04 |
Effects of Structure Parameters of 6H-SiCOI MESFET's on Its Characteristics |
| |
| GONG Xin,ZHANG Jin-cheng,HAO Yue,LI Pei-xian.Effects of Structure Parameters of 6H-SiCOI MESFET''''s on Its Characteristics[J].Microelectronics,2004,34(3):257-260,264. |
| |
| Authors: | GONG Xin ZHANG Jin-cheng HAO Yue LI Pei-xian |
| |
| Abstract: | Using two-dimensional device simulator Medici, effects of structural parameters of SiCOI (SiC on Insulator) MESFET's on its characteristics (threshold voltage and transconductance) are studied, such as doping concentration and thickness of the active layer, and gate length. Simulation results show that structure parameters have a great effect on the characteristics of SiCOI MESFET's. Results obtained from this work are discussed with respect to its physical mechanism. |
| |
| Keywords: | SiCOI MESFET Structural parameter |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
