首页 | 本学科首页   官方微博 | 高级检索  
     

TiO_2表面氧吸附模拟与氧敏特性研究
引用本文:叶伟国,潘海波. TiO_2表面氧吸附模拟与氧敏特性研究[J]. 传感器与微系统, 2007, 26(4): 28-30,33
作者姓名:叶伟国  潘海波
作者单位:1. 绍兴文理学院,物理系,浙江绍兴,312000
2. 福州大学,化学系,福建,福州,350002
基金项目:福建省纳米重大专项计划
摘    要:根据经典的统计理论,并结合麦克斯韦速率分布律得出吸附过程中O2吸附量的理论模型,从而获得氧吸附面密度与温度、氧分压的理论变化规律。在活化能Ea=0.30 eV的情况下,TiO2对氧气吸附的温度敏感区域在120~410K之间,最佳吸附温度为370K,这与由金红石相TiO2所制成氧敏元件的最佳灵敏度所处的工作温度(378K)相近。并由模拟理论推测O2在半导体表面的吸附面密度与氧分压呈线性增加。

关 键 词:气体传感器  氧吸附  能量粒子  活化能
文章编号:1000-9787(2007)04-0028-03
修稿时间:2006-09-18

Study on oxygen absorption simulation and sensing characteristic for TiO2 surface
YE Wei-guo,PAN Hai-bo. Study on oxygen absorption simulation and sensing characteristic for TiO2 surface[J]. Transducer and Microsystem Technology, 2007, 26(4): 28-30,33
Authors:YE Wei-guo  PAN Hai-bo
Affiliation:1. Department of Physics, Shaoxing University ,Shaoxing 312000, China; 2. Department of Chemistry, Fuzhou University,Fuzhou 350002, China
Abstract:The theoretical processes of the adsorbed O2 density with temperature and oxygen pressure are explained by a classical statistical theory and a theoretical model in the adsorption process according to Maxwell- Boltzmann distribution. The sensitized temperature for adsorbed oxygen on the TiO2 surface is in the region of 120 -410 K under an active energy Ea =0.30 eV, and the Optimal absorbed temperature is at 370 K. The results are close to the experimental nature, which the oxygen gas sensor is made by rutile TiO2 and optimal operatingtemperature is at 378 K. And also, it is induced by computer simulation that the absorbed O2 density on the surface of semiconductor TiO2 increases linearly with oxygen pressure.
Keywords:gas sensor   oxygen absorption   energy particle   active energy
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号