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N dopant exponential profiles for silicon solar cells |
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| Authors: | L Hernandez R Soler A Martel |
| Affiliation: | Institute of Materials and Reagents for Electronics (IMRE), University of Havana, Havana, Cuba |
| Abstract: | A numerical model of solar cells is described, which provides optimum design rules for exponential N+ dopant profiles for heavily doped emitter regions. The model gives a useful insight into the relative impact of surface and bulk recombination on device performance. Results agree well with theorical models. |
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