The effect of small-signal AC voltages on C–V characterization and parameter extraction of SiO2 thin films |
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| Authors: | Hongguo Zhang Pant Gurang Nihdi Sigh Quvdo Manuel Robert Wallace Bruce Gnade Kevin Stokes |
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| Affiliation: | a Advanced Materials Research Institute, College of Sciences SC 2015, University of New Orleans, New Orleans, LA 70148, USA;b Laboratory for Electronic Materials and Devices, University of North Texas, Deton, TX 76203, USA |
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| Abstract: | The effect of different small-signal ac voltage amplitudes on C–V curves characterized by thin SiO2 based p-type MOS capacitor with aluminum gate is reported. When the small-signal ac voltage is comparable to the gate bias, the thickness of SiO2 thin films extracted from the accumulation capacitance is found to be independent of small-signal ac voltage amplitudes, but the flat band voltage shift and interface state density associated with the variation of depletion layer capacitance are dependent on small-signal ac voltage amplitudes. They all increase with the small-signal ac voltage amplitudes. The experimental results reveal that the optimum small-signal ac voltage should be less than 100 mV. The mechanisms involving the depletion layer changes with small-signal ac voltages in SiO2 thin films are also discussed in this paper. |
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