| MOCVD生长超突变结GaAs变容管材料 |
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| 作者单位： | The 13th Institute，Ministry of EI，Shijiazhuang，050051 |
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| 摘 要： | 用ＭＯＣＶＤ生长了用于ＧａＡｓ变容二极管的结构材料。分别用ＳｉＨ＿４和ＣＣｌ＿４作为掺杂剂对ＧａＡｓ进行ｎ型和ｐ型掺杂，找到了适合高质量变容管材料的方法．材料用于器件制作，得到了反向击穿电压大于２５Ｖ、电容变化比大于４０的变容管。
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| 关 键 词： | 变容二极管，砷化镓材料 |
Growth of Hyperabrupt GaAs Varactor Structure Material by MOCVD |
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| Authors: | Li Jing Zhang QiLin Guan Xingguo Ren Yongyi Liu Yingbin Liu Yanfei |
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| Abstract: | GaAs epitaxial structure for hyperabrupt junction varactor was grown by MOCVD. The doping of n and p-type for GaAs was studied using SiH_4 and CCl_4 as a dopant respectively. The growth conditions for the varactor structure were optimized. Varactor devices with break-down voltage greater than 25 V and capacitance ratio of 40 were obtained. |
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| Keywords: | Varactor GaAs material |
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