| 300V以上硅基新型JBS肖特基二极管的制备 |
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| 引用本文： | 王一帆,王朝林,刘肃,何少博. 300V以上硅基新型JBS肖特基二极管的制备[J]. 电子器件, 2011, 34(6): 607-610 |
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| 作者姓名： | 王一帆 王朝林 刘肃 何少博 |
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| 作者单位： | 兰州大学微电子所;电子科技大学微电子与固体电子学院 |
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| 基金项目： | 甘肃省科技支撑计划项目(090GKCA049) |
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| 摘 要： | 为了在保留传统肖特基二极管正向压降低、电流密度大优点的基础上,使其反向击穿电压提高到了300 v以上,我们采用硅材料做为衬底,肖特基结区采用蜂房结构,终端采用两道场限环结构加一道切断环结构,所制备的肖特基二极管在正向电流10A时,正向压降仅为0.79 V；同时在施加300 V反向电压时,反向漏电流在5μA以下.
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| 关 键 词： | 肖特基二极管 击穿电压300 V以上 蜂房结构 场限环 |
Fabrication of silicon based novel structure JBS diode with breakdown voltage above 300V |
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| WANG Yifan,WANG Zhaolin,LIU Su,HE Shaobo. Fabrication of silicon based novel structure JBS diode with breakdown voltage above 300V[J]. Journal of Electron Devices, 2011, 34(6): 607-610 |
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| Authors: | WANG Yifan WANG Zhaolin LIU Su HE Shaobo |
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| Affiliation: | 1.Institute of Microelectronics,Lanzhou University,Lanzhou 730000,China;2.Institute of Microelectronics and solid electronics,University of Electronic Science and Technology of China,Chengdu 610054,China |
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| Abstract: | To retain the advantages of traditional Schottky diodes,such as high current density under low forward voltage and improve their breakdown voltage to above 300 V,we fabricated silicon-based novel structure JBS diodes.Its Schottky barrier area is a honey comb structure,and its terminal is formed by two floating field limiting rings(FLRs) plus a cutoff ring structure.Its forward voltage-drop is only 0.79 V under 10 A current,while its leakage current is less than 5 μA when 300 V reverse voltage is applied. |
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| Keywords: | Schottky diodes breakdown voltage above 300 V honey comb structure FLRs |
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