基于金属浮栅层有机薄膜非易失性存储器的制备与表征

以聚甲基丙烯酸甲酯(PMMA)为栅介质,以并五苯为有机薄膜制备了有机薄膜非易失性存储器,研究基于热蒸发金属金浮栅层的存储行为。在2 s脉冲的偏压下,浮栅层通过充放电过程可导致明显的阈值电压偏移。在1 V的脉冲电压下可实现电荷的写入/擦除操作,在6 V的脉冲电压下可获得30.0 V的存储窗口。实验结果表明,基于金属浮栅层并以并五苯作为有机薄膜来制备非易失性存储器具有一定的研究价值和应用前景。

Preparation and Characterization of Organic Thin Film Nonvolatile Memory Based on Metal Floating Gate

An organic thin film non-volatile memory was prepared with polymethyl-methacrylate(PMMA) as gate dielectric and pentacene as organic thin film. Under an proper bias voltage(2 s pulses), the floating gate layer caused significant threshold voltage shift through the charging and discharging process. Pulses of 1 V resulted in clear write and erase states. A storage window of 30.0 V can be obtained under the pulses of 6 V. The results shows that the preparation of nonvolatile memory based on metal floating gate layer and pentacene as organic thin film has specific research value and application prospect.