一种具有新型增益控制技术的CMOS宽带可变增益LNA

高速超宽带无线通信的多标准融合是未来射频器件的发展趋势，该文提出一种基于CMOS工艺、具有新型增益控制技术的宽带低噪声放大器(LNA)，采用并联电阻反馈实现宽带输入匹配，并引入噪声消除技术来减小噪声以提高低噪声性能；输出带有新型6位数字可编程增益控制电路以实现可变增益。采用中芯国际0.13m RF CMOS工艺流片，芯片面积为0.76 mm2。测试结果表明LNA工作频段为1.1-1.8 GHz，最大增益为21.8 dB、最小增益8.2 dB，共7种增益模式。最小噪声系数为2.7 dB，典型的IIP3为-7 dBm。

A CMOS Wideband Variable Gain LNA with Novel Gain Control Method

Multi-standard convergence for high speed ultra-wideband wireless communication leads the evolution for future RF devices. In this paper a CMOS wideband low noise amplifier (LNA) with novel gain control method is presented. In the first stage shunt-resistor feedback is used for wideband input matching, while for low noise performance noise cancelling circuit is adopted. A novel 6-bit digital programmable gain control circuit is exploited and adopted in the second stage for variable gain. Fabricated with SMIC 0.13μm RF CMOS process, die area is 0.76mm². Measured results show that the LNA operates in 1.1-1.8 GHz frequency band, and the maximum and minimum gain are 21.8 dB and 8.2 dB, 7 gain modes in all. Minimum noise figure is 2.7 dB. Typical IIP3 is -7 dBm.