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FET on hydrogenated diamond surface |
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| Authors: | Yu V Gulyaev A Yu Mityagin G V Chucheva M S Afanas’ev K N Zyablyuk N Kh Talipov P G Nedosekin A E Nabiev |
| Affiliation: | 1. Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences, pl. Vvedenskogo 1, Fryazino, Moscow oblast, 141196, Russia 2. Industrial Technological Center UralAlmazInvest, ul. Ivana Franko 4, Moscow, 121108, Russia 3. Azerbaijan State Pedagogical University, ul. U. Gadzhibekova 34, Baku, 370000, Azerbaijan |
| Abstract: | It is demonstrated that a FET can be created on a hydrogenated diamond surface. A technology for production and properties of conducting hydrogenated diamond surface are considered. The technology is used to create a FET on the hydrogenated (110) surface of the 2A natural diamond. |
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