Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys

In this paper, we present the results of the white light-emitting diodes (LEDs) construction based on GaPAsN semiconductor alloys on a GaP substrate. Heterostructure electroluminescence with a continuous emission spectrum in the range from 350 nm to 1050 nm is observed. The output of light through the side walls and the face side of the sample enabled us to achieve white light emission by means of ultra-wide electroluminescence spectrum covering all visible spectrum and part of the near IR spectral range. While extracting emission through substrate, the short-wavelength part of the visible spectra is absorbed at GaP layer.